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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) *High Switching Speed APPLICATIONS *Power switching *Power amplification *Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage MAX 500 400 7 UNIT V V Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak w w scs .i w 8 16 4 8 80 150 -55~150 V A .cn mi e A A A IBM PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.56 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2292 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 200mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.5 V hFE-1 DC Current Gain IC= 4A; VCE= 2V 15 hFE-2 DC Current Gain IC= 8A; VCE= 2V 8 ICBO Collector Cutoff Current VCB= 500V; IE= 0 ICEO Collector Cutoff Current IEBO Emitter Cutoff Current fT Current-Gain--Bandwidth Product Switching Times w w scs .i w VCE= 400V; IB= 0 VEB= 7V; IC= 0 .cn mi e 20 0.1 mA 0.1 mA 1.0 mA IC= 1A; VCE= 10V MHz ton Turn-On Time IC=4A; IB1=- IB2= 0.8A; RL= 5; VBB2= 4V 1.0 s tstg Storage Time 3.0 s tf Fall Time 0.7 s isc Websitewww.iscsemi.cn |
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